In the electronics industry, binary devices have played a critical role since the development
of solid-state transistors. While binary technology associates devices' inherent ability to be …

Multiple valued logic (MVL) can represent an exponentially higher number of
data/information compared to the binary logic for the same number of logic bits. Compared …

Graphene nanoribbons (GNRs) are a good replacement material for silicon to overcome
short-channel effects in nanoscale devices. However, with continuous technology scaling …

CMOS technology below 10 nm faces fundamental limits which restricts its applicability for
future electronic application mainly in terms of size, power consumption, and speed. In …

Many research is underway in the semiconductor industry. Conventional MOSFETs are
getting replaced with emerging devices such as junctionless field-effect-transistor (JLTFET) …

Graphene Nano Ribbon Field Effect Transistors (GNRFET) have recently started drawing
attractions due to its' unique electrical properties. The possibility of controlling threshold …

We present a low-leakage graphene nano-ribbon transistors (GNRFETs)-based static
random access memory (SRAM) cell in 16nm technology that operates near the sub …

In modern technologies, read stability and write ability have become major concerns in nano
regime for static random access memory (SRAM) cell. This paper provides the stability …

Purpose The performance of the conventional 6T SRAM cell can be improved by using
GNRFET devices with multi-threshold technology. The proposed cell shows the strong …

Described herein are IC devices that include TFT based memory arrays on both sides of a
layer of logic devices. An example IC device includes a support structure (eg, a substrate) on …