[HTML][HTML] Design implementations of ternary logic systems: A critical review
In the electronics industry, binary devices have played a critical role since the development
of solid-state transistors. While binary technology associates devices' inherent ability to be …
of solid-state transistors. While binary technology associates devices' inherent ability to be …
A variation-aware design for storage cells using Schottky-barrier-type GNRFETs
Graphene nanoribbons (GNRs) are a good replacement material for silicon to overcome
short-channel effects in nanoscale devices. However, with continuous technology scaling …
short-channel effects in nanoscale devices. However, with continuous technology scaling …
Design of ternary logic and arithmetic circuits using GNRFET
Multiple valued logic (MVL) can represent an exponentially higher number of
data/information compared to the binary logic for the same number of logic bits. Compared …
data/information compared to the binary logic for the same number of logic bits. Compared …
Comparative analysis of 6T, 7T, 8T, 9T, and 10T realistic CNTFET based SRAM
S Joshi, U Alabawi - Journal of Nanotechnology, 2017 - Wiley Online Library
CMOS technology below 10 nm faces fundamental limits which restricts its applicability for
future electronic application mainly in terms of size, power consumption, and speed. In …
future electronic application mainly in terms of size, power consumption, and speed. In …
Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM
We present a low-leakage graphene nano-ribbon transistors (GNRFETs)-based static
random access memory (SRAM) cell in 16nm technology that operates near the sub …
random access memory (SRAM) cell in 16nm technology that operates near the sub …
GNRFET based ternary logic–prospects and potential implementation
Graphene Nano Ribbon Field Effect Transistors (GNRFET) have recently started drawing
attractions due to its' unique electrical properties. The possibility of controlling threshold …
attractions due to its' unique electrical properties. The possibility of controlling threshold …
Stability analysis of SRAM cell using CNT and GNR field effect transistors
In modern technologies, read stability and write ability have become major concerns in nano
regime for static random access memory (SRAM) cell. This paper provides the stability …
regime for static random access memory (SRAM) cell. This paper provides the stability …
Performance Analysis and Design Comparison of Junctionless TFET: a Review Study
Many research is underway in the semiconductor industry. Conventional MOSFETs are
getting replaced with emerging devices such as junctionless field-effect-transistor (JLTFET) …
getting replaced with emerging devices such as junctionless field-effect-transistor (JLTFET) …
A read-disturb-free stable low power and high-density GNRFET 6T SRAM with multi-VT technology
Purpose The performance of the conventional 6T SRAM cell can be improved by using
GNRFET devices with multi-threshold technology. The proposed cell shows the strong …
GNRFET devices with multi-threshold technology. The proposed cell shows the strong …
Analysis and implementation of graphene nanoribbon field effect transistor based SRAM Cell
Graphene Nanoribbon Field Effect Transistor (GNRFET) these transistors can be considered
as one of the alternatives for the silicon elements in the recent and future trends of designing …
as one of the alternatives for the silicon elements in the recent and future trends of designing …