Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …
High-mobility Si and Ge structures
F Schäffler - Semiconductor Science and Technology, 1997 - iopscience.iop.org
Silicon-based heterostructures have come a long way from the discovery of strain as a new
and essential parameter for band structure engineering to the present state of electron and …
and essential parameter for band structure engineering to the present state of electron and …
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
MT Currie, SB Samavedam, TA Langdo… - Applied physics …, 1998 - pubs.aip.org
A method of controlling threading dislocation densities in Ge on Si involving graded SiGe
layers and chemical-mechanical polishing (CMP) is presented. This method has allowed us …
layers and chemical-mechanical polishing (CMP) is presented. This method has allowed us …
Heteroepitaxial growth of III-V semiconductors on silicon
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
Dislocations in strained-layer epitaxy: theory, experiment, and applications
EA Fitzgerald - Materials science reports, 1991 - Elsevier
In this review paper, we first present an historical perspective of theoretical work and some
early experimental work in the field of dislocations in strained-layer epitaxy. Equilibrium …
early experimental work in the field of dislocations in strained-layer epitaxy. Equilibrium …
Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect
A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
Si/ge nanostructures
K Brunner - Reports on Progress in Physics, 2001 - iopscience.iop.org
A review is given on the formation mechanisms and the properties of Si/Ge nanostructures
that have been synthesized by self-assembling and self-ordering during heteroepitaxy …
that have been synthesized by self-assembling and self-ordering during heteroepitaxy …
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
To obtain a large lattice constant on Si, we have grown compositionally graded Ge x Si1− x
on Si. These buffer layers have been characterized with electron‐beam‐induced current …
on Si. These buffer layers have been characterized with electron‐beam‐induced current …
Silicon–germanium receivers for short-wave-infrared optoelectronics and communications: High-speed silicon–germanium receivers (invited review)
D Benedikovic, L Virot, G Aubin, JM Hartmann… - …, 2021 - degruyter.com
Integrated silicon nanophotonics has rapidly established itself as intriguing research field,
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …