In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …

Silicon-based heterostructures have come a long way from the discovery of strain as a new
and essential parameter for band structure engineering to the present state of electron and …

In this review paper, we first present an historical perspective of theoretical work and some
early experimental work in the field of dislocations in strained-layer epitaxy. Equilibrium …

A method of controlling threading dislocation densities in Ge on Si involving graded SiGe
layers and chemical-mechanical polishing (CMP) is presented. This method has allowed us …

Although conventional homoepitaxy forms high-quality epitaxial layers,,,–, the limited set of
material systems for commercially available wafers restricts the range of materials that can …

High speed photodetectors are a key building block, which allow a large wavelength range
of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3 …

A review is given on the formation mechanisms and the properties of Si/Ge nanostructures
that have been synthesized by self-assembling and self-ordering during heteroepitaxy …