Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
A review of technologies and design techniques of millimeter-wave power amplifiers
V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …
focusing on broadband design techniques. An overview of the main solid-state technologies …
[PDF][PDF] Low-Earth orbit user segment in the Ku and Ka-band: An overview of antennas and RF front-end technologies
Low-Earth Orbit User Segment in the Ku and Ka-Band Page 1 Heriot-Watt University
Research Gateway Low-Earth Orbit User Segment in the Ku and Ka-Band Citation for …
Research Gateway Low-Earth Orbit User Segment in the Ku and Ka-Band Citation for …
A 24–29.5-GHz highly linear phased-array transceiver front-end in 65-nm CMOS supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G new radio
Y Yi, D Zhao, J Zhang, P Gu, Y Chai… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a four-element phased-array transceiver (TRX) front-end for millimeter-
wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and …
wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and …
A 28-/37-/39-GHz linear Doherty power amplifier in silicon for 5G applications
This paper presents the first 28-/37-/39-GHz linear Doherty power amplifier (PA) in silicon for
broadband fifthgeneration (5G) applications. We introduce a new transformer-based on-chip …
broadband fifthgeneration (5G) applications. We introduce a new transformer-based on-chip …
A wideband class-AB power amplifier with 29–57-GHz AM–PM compensation in 0.9-V 28-nm bulk CMOS
M Vigilante, P Reynaert - IEEE Journal of Solid-State Circuits, 2017 - ieeexplore.ieee.org
A wideband amplitude to phase (AM-PM) compensated class-AB power amplifier (PA)
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …
Power amplifiers for mm-wave 5G applications: Technology comparisons and CMOS-SOI demonstration circuits
A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …
wave 5G systems, along with a comparison of the potential of different semiconductor …
A broadband linear ultra-compact mm-wave power amplifier with distributed-balun output network: Analysis and design
This article presents a broadband power amplifier (PA) with a distributed-balun output
network that provides the PA optimum load impedance over a wide bandwidth. The …
network that provides the PA optimum load impedance over a wide bandwidth. The …
Millimeter-wave power amplifier integrated circuits for high dynamic range signals
The next-generation 5G and beyond-5G wireless systems have stimulated a substantial
growth in research, development, and deployment of mm-Wave electronic systems and …
growth in research, development, and deployment of mm-Wave electronic systems and …
Single transformer-based compact Doherty power amplifiers for 5G RF phased-array ICs
We present a broadband parallel-combined compact Doherty power amplifier (PA) in a 28-
nm bulk complementary metal–oxide–semiconductor (CMOS) device technology for fifth …
nm bulk complementary metal–oxide–semiconductor (CMOS) device technology for fifth …
Millimeter-wave continuous-mode power amplifier for 5G MIMO applications
This paper presents three millimeter-wave (mm-wave) continuous-mode power amplifiers
(PAs) for fifth-generation (5G) MIMO applications, including a two-stage differential …
(PAs) for fifth-generation (5G) MIMO applications, including a two-stage differential …