Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro-and...

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[HTML][HTML] Nanoscopic structural and optical investigations on blue InGaN single quantum wells serving as layers beneath efficient red active layers

Z Zhang, R Ishii, K Shojiki, M Funato… - Journal of Applied …, 2025 - pubs.aip.org
In state-of-the-art red InGaN light-emitting diodes (LEDs), an InGaN-based blue single
quantum well (SQW) is used as an underlying layer to improve the red emission efficiency …
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Carrier injection via V-defects for efficient green and red GaN LEDs

S Marcinkevičius, R Yapparov, T Tak… - … for Security and …, 2024 - spiedigitallibrary.org
Long wavelength InGaN/GaN quantum well (QW) light emitting diodes (LEDs) are essential
components of solid-state lighting and displays. However, efficiency of these devices is …
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