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Electrical tuning of terahertz plasmonic crystal phases
We present an extensive study of resonant two-dimensional (2D) plasmon excitations in
grating-gated quantum well heterostructures, which enable an electrical control of periodic …
grating-gated quantum well heterostructures, which enable an electrical control of periodic …
Terahertz detection with graphene FETs: Photothermoelectric and resistive self-mixing contributions to the detector response
Field-effect transistors coupled to integrated antennas [terahertz field-effect transistors
(TeraFETs)] are photodetectors being actively developed for the terahertz (THz) frequency …
(TeraFETs)] are photodetectors being actively developed for the terahertz (THz) frequency …
Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi.
Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …
[HTML][HTML] Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons
Temperature-dependent effective mass in AlGaN/GaN heterostructures was experimentally
observed via THz time domain spectroscopy of 2D plasmons in the range of 80–300 K …
observed via THz time domain spectroscopy of 2D plasmons in the range of 80–300 K …
AlGaN/GaN on SiC devices without a GaN buffer layer: Electrical and noise characteristics
We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium
gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN …
gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN …
[HTML][HTML] Optical performance of two dimensional electron gas and GaN: C buffer layers in AlGaN/AlN/GaN heterostructures on SiC substrate
Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were
developed as the method for the investigation of high-frequency characteristics of two …
developed as the method for the investigation of high-frequency characteristics of two …
[HTML][HTML] Electro-optical modulation of terahertz beam by drifting space-charge domains in n-GaN epilayers
RM Balagula, L Subačius, P Prystawko… - Journal of Applied …, 2023 - pubs.aip.org
Electro-optical modulation of a terahertz beam by drifting space-charge domains in n-GaN
epilayers under pulsed electric field excitation was found and investigated at a temperature …
epilayers under pulsed electric field excitation was found and investigated at a temperature …
Investigation of electron effective mass in AlGaN/GaN heterostructures by THz spectroscopy of drude conductivity
Terahertz time domain spectroscopy (TDS) of the two-dimensional (2-D) electrons in various
commercial AlGaN/GaN heterostructures was performed in the frequency range of 0.1–2.0 …
commercial AlGaN/GaN heterostructures was performed in the frequency range of 0.1–2.0 …
Broadband super-resolution terahertz time-domain spectroscopy applied to gas analysis
Commercially available terahertz (THz) time-domain spectroscopy (THz-TDS) apparatus is
used in multiple application fields from material science to biology and even in the industry …
used in multiple application fields from material science to biology and even in the industry …
Modified rigorous coupled-wave analysis for grating-based plasmonic structures with a delta-thin conductive channel: far-and near-field study
The modified rigorous coupled-wave analysis technique is developed to describe the optical
characteristics of the plasmonic structures with the grating-gated delta-thin conductive …
characteristics of the plasmonic structures with the grating-gated delta-thin conductive …