Negative thermal expansion coefficient of Al pnictides–A systematic realistic pressure-dependent lattice dynamical study

DN Talwar, HH Lin - Materials Science and Engineering: B, 2024 - Elsevier
In weakly and strongly bonded semiconductors, the knowledge of accurate linear thermal
expansion coefficients α T and Grüneisen constants γ T play crucial roles for attaining the …

Effects of temperature and pressure on the optical and vibrational properties of thermoelectric SnSe

I Efthimiopoulos, M Berg, A Bande, L Puskar… - Physical Chemistry …, 2019 - pubs.rsc.org
We have conducted a comprehensive investigation of the optical and vibrational properties
of the binary semiconductor SnSe as a function of temperature and pressure by means of …

[HTML][HTML] Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN …

M Jiang, Y Zhao, P Zheng, J Zhang, W Yang… - Fundamental …, 2024 - Elsevier
Due to the wide range of potential applications for next-generation multi-functional devices,
the flexible self-powered photodetector (PD) with polarity-switchable behavior is essential …

Self-powered image array composed of touch-free sensors fabricated with semiconductor nanowires

S Han, SK Lee, JW Kim, S Bae, SH Bae, KH Choi… - Materials …, 2022 - pubs.rsc.org
We successfully develop a self-powered image array (IA) composed of 16 touch-free
sensors (TFSs) fabricated with semiconductor InN nanowires (NWs) as a response medium …

Pressure dependence of electronic, vibrational and optical properties of wurtzite-boron nitride

M Silvetti, C Attaccalite, E Cannuccia - Physical Review Materials, 2023 - APS
Wurtzite Boron Nitride (w BN) is a wide band gap BN polymorph with unique mechanical
properties such as hardness and stiffness. Initially synthesized in 1963 by transforming …

[PDF][PDF] Comparison of the results for calculation of vortex currents after sudden expansion of the pipe with different diameters

BM Kholboev, DP Navruzov, DS Asrakulova… - 2022 - zbc.uz.zgora.pl
In this work, a numerical study of a sharply expanding highly swirling flow is carried out
using v2-f models based on the Comsol Multiphysics 5.6 software package and a two-fluid …

[PDF][PDF] Hydrostatic and uniaxial effects in InGaN/GaN quantum wells

W Trzeciakowski, A Bercha… - J. Appl. Phys, 2018 - academia.edu
We calculate strains, polarizations, and electric fields in InGaN/GaN quantum wells (lattice
matched to GaN) under the influence of hydrostatic and uniaxial (along the c-axis) pressure …

Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride

E Poliani, D Seidlitz, M Ries, SJ Choi… - The Journal of …, 2020 - ACS Publications
We report a detailed study of the strong near-field Raman scattering enhancement, which
takes place in tip-enhanced Raman scattering (TERS) in indium nitride. In addition to the …

[HTML][HTML] Computational phonon dispersions structural and thermodynamical characteristics of novel C-based XC (X= Si, Ge and Sn) materials

DN Talwar - Next Materials, 2024 - Elsevier
A realistic rigid-ion-model (RIM) is adopted here to report the results of systematic
calculations for comprehending the phonon dispersions ω jq→, structural, and …

Nanoscale InN clusters and compositional inhomogeneities in InGaN epitaxial layers quantified by tip-enhanced Raman scattering

D Seidlitz, E Poliani, M Ries, A Hoffmann… - Applied Physics …, 2021 - pubs.aip.org
We investigate the compositional homogeneity of InGaN thin films with a high In content
grown by migration-enhanced plasma-assisted metal-organic chemical vapor deposition …