Epitaxial oxides on semiconductors: from fundamentals to new devices
Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …
functionalities can range from high temperature superconductivity to multiferroicity and novel …
[BOOK][B] Epitaxial growth of complex metal oxides
The atomic arrangement and subsequent properties of a material are determined by the type
and conditions of growth leading to epitaxy, making control of these conditions key to the …
and conditions of growth leading to epitaxy, making control of these conditions key to the …
Epitaxial ferroelectric oxides on silicon with perspectives for future device applications
M Spreitzer, D Klement, T Parkelj Potočnik… - APL materials, 2021 - pubs.aip.org
Functional oxides on silicon have been the subject of in-depth research for more than 20
years. Much of this research has been focused on the quality of the integration of materials …
years. Much of this research has been focused on the quality of the integration of materials …
Integration of BiFeO 3/La 0.7 Sr 0.3 MnO 3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors
We report on the use of SrTiO3 films on GaAs (001) substrates grown by molecular beam
epitaxy (MBE) as intermediate buffer layers for the heteroepitaxial growth of ferromagnetic …
epitaxy (MBE) as intermediate buffer layers for the heteroepitaxial growth of ferromagnetic …
Tuning electrical properties of PZT film deposited by Pulsed Laser Deposition
The variation of the chemical composition and properties of PZT films as a function of
oxygen pressure and laser fluence during pulsed laser deposition is used to tune the …
oxygen pressure and laser fluence during pulsed laser deposition is used to tune the …
[HTML][HTML] Oxide heterostructures for high density 2D electron gases on GaAs
L Kornblum, J Faucher, MD Morales-Acosta… - Journal of Applied …, 2018 - pubs.aip.org
2D electron gases (2DEGs) that form at oxide interfaces provide a rich testbed of
phenomena for condensed matter research, with emerging implementations in devices …
phenomena for condensed matter research, with emerging implementations in devices …
Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction
In this chapter, examples of the use of reflection high-energy electron diffraction (RHEED) in
combination with pulsed laser deposition (PLD) are described. Both the use of RHEED as a …
combination with pulsed laser deposition (PLD) are described. Both the use of RHEED as a …
Atomic-scale structural and electronic properties of interfaces: A combined STEM-EELS and first-principles study
The electronic properties of epitaxial oxide thin films grown on compound semiconductors
are largely determined by the interfacial atomic structure, as well as the thermodynamic …
are largely determined by the interfacial atomic structure, as well as the thermodynamic …
Integration of p-type β-In 2 S 3 thin films on III-nitride heterostructures for multiple functional applications
We report on the conversion of n-type InN thin films on top of III-nitride heterostructures to p-
type β-In2S3 by post-growth heat treatments in a sulfur-vapor environment and address their …
type β-In2S3 by post-growth heat treatments in a sulfur-vapor environment and address their …
Heteroepitaxial growth and characterization of BiFeO3 thin films on GaAs
The paper deals with the integration of well-known bismuth ferrite (BiFeO 3) multiferroic
oxide with GaAs semiconductor. First 5 nm ultrathin SrTiO 3 films were grown on GaAs (001) …
oxide with GaAs semiconductor. First 5 nm ultrathin SrTiO 3 films were grown on GaAs (001) …