Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
Coherent manipulation of the binary degrees of freedom is at the heart of modern quantum
technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient …
technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient …
Emptying Dirac valleys in bismuth using high magnetic fields
Z Zhu, J Wang, H Zuo, B Fauqué, RD McDonald… - Nature …, 2017 - nature.com
The Fermi surface of elemental bismuth consists of three small rotationally equivalent
electron pockets, offering a valley degree of freedom to charge carriers. A relatively small …
electron pockets, offering a valley degree of freedom to charge carriers. A relatively small …
Valley-Tunable Even-Denominator Fractional Quantum Hall State in the Lowest Landau Level of an Anisotropic System
Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors (ν)
are of prime interest as they are predicted to host exotic, topological states of matter. We …
are of prime interest as they are predicted to host exotic, topological states of matter. We …
Valley-degenerate two-dimensional electrons in the lowest Landau level
TM Kott, B Hu, SH Brown, BE Kane - Physical Review B, 2014 - APS
We report low temperature magnetotransport measurements on a high mobility (μ= 325 000
cm 2/V s) two-dimensional electron system on a H-terminated Si (111) surface. We observe …
cm 2/V s) two-dimensional electron system on a H-terminated Si (111) surface. We observe …
Orbital effects of a strong in-plane magnetic field on a gate-defined quantum dot
We theoretically investigate the orbital effects of an in-plane magnetic field on the spectrum
of a quantum dot embedded in a two-dimensional electron gas (2DEG). We derive an …
of a quantum dot embedded in a two-dimensional electron gas (2DEG). We derive an …
Contrast between spin and valley degrees of freedom
We measure the renormalized effective mass (m∗) of interacting two-dimensional electrons
confined to an AlAs quantum well while we control their distribution between two spin and …
confined to an AlAs quantum well while we control their distribution between two spin and …
Valley Gapless Semiconductor: Models and Applications
The emerging field of valleytronics harnesses the valley degree of freedom of electrons, akin
to how electronic and spintronic devices utilize the charge and spin degrees of freedom of …
to how electronic and spintronic devices utilize the charge and spin degrees of freedom of …
Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system
We measure the effective mass (m∗) of interacting two-dimensional electrons confined to a
4.5-nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane …
4.5-nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane …
Realization of a valley superlattice
In a number of widely studied materials, such as Si, AlAs, Bi, graphene, MoS 2, and many
transition metal dichalcogenide monolayers, electrons acquire an additional, spinlike …
transition metal dichalcogenide monolayers, electrons acquire an additional, spinlike …
Dependence of effective mass on spin and valley degrees of freedom
We measure the effective mass (m*) of interacting two-dimensional electrons confined to an
AlAs quantum well while we change the conduction-band valley occupation and the spin …
AlAs quantum well while we change the conduction-band valley occupation and the spin …