Since the discovery of Rochelle salt a century ago, ferroelectric materials have been
investigated extensively due to their robust responses to electric, mechanical, thermal …

This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …

Electronic structure modulation of active sites is critical important in Fenton catalysis as it
offers a promising strategy for boosting H2O2 activation. However, efficient generation of …

Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …

Oxygen vacancies play crucial roles in determining the physical properties of metal oxides,
representing important building blocks in many scientific and technological fields due to their …

To avoid the epitaxy dilemma in various thin films, such as complex oxide, silicon, organic,
metal/alloy, etc., their stacking at an atomic level and secondary growth are highly desired to …

The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …

Owing to their attractive application potentials in both non-volatile memory and
unconventional computing, memristive devices have drawn substantial research attention in …

Recent progress in artificial intelligence is largely attributed to the rapid development of
machine learning, especially in the algorithm and neural network models. However, it is the …

Memory cells have always been an important element of information technology. With
emerging technologies like big data and cloud computing, the scale and complexity of data …