Recent progress in ammonothermal technology of bulk GaN growth in basic environment is
presented and discussed in this paper. This method enables growth of two-inch in diameter …

The yellow luminescence (YL) band with a maximum at 2.2 eV is the dominant defect‐
related luminescence in unintentionally doped GaN. The discovery of the mechanism …

Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …

Wurtzite GaN materials underpin many aspects of optoelectronic applications due to the
special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low …

Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as
a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently …

Photoluminescence (PL) bands in GaN associated with point defects involving nitrogen or
gallium vacancy (VN or VGa) are reviewed. The VN‐containing defects, including the …

Gallium nitride continues to be a material of intense interest for the ongoing advancement of
electronic and optoelectronic devices. While the bulk of today's markets for low-performance …

The production of pure hydrogen for use in energy applications and related industries often
relies on the permeation of hydrogen through palladium-based membranes. However, the …

Ammonothermal GaN samples with the concentration of free electrons of 10 18 and 10 19
cm− 3 were annealed in a wide range of temperatures (T ann= 300–1400 C) under …

Gallium nitride is an increasingly technologically relevant material system. While donor
do** GaN to low and intermediate dopant concentrations using silicon and germanium …