In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field
effect transistors (GAA-FET) is presented. The center potential is calculated for different …

This work explores charge plasma based negative capacitance tunnel field effect transistor
(CP-NC-TFET) with Si0. 5Ge0. 5/Si heterojunction using numerical calculation. Ferroelectric …

This paper presents an electrostatic potential–based analytical model of drain current for
ferroelectric dual material gate all around tunnel field effect transistors (FE‐DMGAA‐TFETs) …

In this work, the charge plasma (CP) methodology is utilized whose advantage is that it
minimizes the random dopant fluctuations that occur due to do**. The proposed device is …

The high electron mobility transistor (HEMT) inherits high electron mobility as well as wider
energy bandgap and is a suitable candidate for high-frequency operation. These interesting …

The temperature significantly affects the performance of semiconductor devices. Therefore, it
is mandatory to analyze its impact on the performance of these devices. GaN has fascinated …

The multi-gate field effect transistors (FETs) offer significant merits in comparison with
conventional devices such as less switching power, compatibility with current manufacturing …

AlGaN/GaN HFETs are used for power amplification applications [1, 3, 5, 8, 11, 12, 14, 29–
35]. The wide band-gap of GaN in comparison to silicon enhances the breakdown voltage of …

The multi-gate field effect transistors (FETs) offer significant merits in comparison with
conventional devices such as less switching power, compatibility with current manufacturing …

The III-V (ie InGaAs) MOSFET has become very popular in the today's market due to high
performance in small signal RF, digital logic circuits and abundance in the nature of the …