A 763 pW 230 pJ/conversion fully integrated CMOS temperature-to-digital converter with+ 0.81° C/− 0.75° C inaccuracy

H Wang, PP Mercier - IEEE Journal of Solid-State Circuits, 2019 - ieeexplore.ieee.org
A sub-nW fully integrated temperature sensor is presented that digitizes temperature via a
capacitive charging time feedback loop controlled by a least significant bit (LSB)-first …

A 2.18-pJ/conversion, 1656-μm² Temperature Sensor With a 0.61-pJ·K² FoM and 52-pW Stand-By Power

K Pelzers, H **n, E Cantatore… - IEEE Solid-State Circuits …, 2020 - ieeexplore.ieee.org
This letter describes a miniature, ultra low power, all-dynamic temperature sensor based on
a duty-cycled resistive transducer bridge and a 9-bit asynchronous SAR ADC in 65-nm …

A 1.01 NEF low-noise amplifier using complementary parametric amplification

G Atzeni, J Guichemerre, A Novello… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This paper presents a discrete-time low-noise amplifier for miniaturized sensor nodes. Such
amplifier achieves a noise efficiency factor of 1.01 and a power efficiency factor of 1.63 …

A 419pw process-invariant temperature sensor for ultra-low power microsystems

A Pullela, A Ali, A Jain, A Banthi… - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
The paper presents a sub-nW BJT based temperature sensor for ultra-low power
microsystems. The sensor is based on amplifying the difference between base-emitter …

Exploring Suitable Electrical Elements on Human Detection Sensor Using Electromagnetic Noise

K Ikeda, R Ohmura - 2019 IEEE International Conference on …, 2019 - ieeexplore.ieee.org
To support a human by installing sensor and communication device is widely studied.
Human detection is a key technology to trigger such a service. In some cases, the sensor is …

An All-Digital Temperature Sensor with Process and Voltage Variation Tolerance for IoT Applications

CC Chung, HH Huang - 2019 32nd IEEE International System …, 2019 - ieeexplore.ieee.org
The embedded temperature sensor which monitors the hot spots of the chip had become an
essential circuit for improving the reliability of the system-on-a-chip (SoC). However, most of …

Bandgap voltage references with curvature elimination for temperature independence

T Archer - 2019 - search.proquest.com
Accurate operation of precision electrical devices over temperature is often dependent on
the temperature independence of a reference voltage. The primary method of generating …

エナジーハーベスティング用高インピーダンス 3 導体折返しダイポールアンテナ

西尾拓哉, 野口啓介, 伊東健治… - 電子情報通信学会論文誌 …, 2020 - search.ieice.org
センサネットワーク端末に用いる電力供給用レクテナの高効率化をねらいとして, 10kΩ
の高インピーダンスを有する 3 導体折返しダイポールアンテナ (3 導体 FDA) について検討している …