A 60-GHz band, three-stage pseudo-differential power amplifier (PA) is implemented with
input and output baluns on-chip. Each stage consists of a neutralized common-source …

In the framework of MOSFET reliability for RF/AMS applications, a deep investigation of RF
parameters degradation is performed. An innovative flow, composed of DC and RF stresses …

An in-depth study of the degradation dynamics in CMOS power amplifiers is presented. The
transistor was operated at 1.9 GHz under real-world load and power conditions. Threshold …

This paper presents a Class-D outphasing RF Power Amplifier (PA) which can operate at a
5.5 V supply and deliver+ 32dBm at 1.85 GHz in a standard 130nm CMOS technology. The …

The target in the design of CMOS radio-frequency (RF) transceivers for wireless application
is the highest integration level, despite reliability issues of conventional submicron …

Normalized degradations of drain efficiency and output power as a function of conduction
angle, maximum drain current, and maximum output voltage are modeled. Good agreement …

The complexities associated with performing accurate large-signal measurements have
been prohibitive in determining device level reliability under RF stress. In this work, a large …

Both the degradations of dc and RF characteristics of nMOS transistors due to hot-carrier
effect and instantaneous high RF power stresses are presented in this paper. The drain …

Laterally double-diffused MOS (LDMOS) transistors subjected to hot-electron stress effects
have been studied experimentally. The measured threshold voltage, on-resistance, and gate …

RF-stress effects on MOS power-amplifier performance are studied. The class-E power-
amplifier power efficiency as a function of breakdown (BD) location has been evaluated. The …