Next-generation mid-infrared sources
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …
applications in molecular sensing, security and defense, energy conservation, and …
Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Valence band engineering of GaAsBi for low noise avalanche photodiodes
Abstract Avalanche Photodiodes (APDs) are key semiconductor components that amplify
weak optical signals via the impact ionization process, but this process' stochastic nature …
weak optical signals via the impact ionization process, but this process' stochastic nature …
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser
P Ludewig, N Knaub, N Hossain, S Reinhard… - Applied Physics …, 2013 - pubs.aip.org
The Ga (AsBi) material system opens opportunities in the field of high efficiency infrared
laser diodes. We report on the growth, structural investigations, and lasing properties of …
laser diodes. We report on the growth, structural investigations, and lasing properties of …
First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data
Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
Progress toward III–V bismide alloys for near-and midinfrared laser diodes
Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter… - … status solidi (b), 2014 - Wiley Online Library
The structural and optical properties of GaAs1− xBix alloys for x up to 0.108 have been
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …
Optical gain in GaAsBi/GaAs quantum well diode lasers
Abstract Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class
of near-infrared devices where, by use of the unusual band structure properties of GaAsBi …
of near-infrared devices where, by use of the unusual band structure properties of GaAsBi …
Quantum wells, superlattices, and band-gap engineering
M Fox, R Ispasoiu - Springer handbook of electronic and photonic …, 2017 - Springer
This chapter reviews the principles of bandgap engineering and quantum confinement in
semiconductors, with a particular emphasis on the optoelectronic properties of quantum …
semiconductors, with a particular emphasis on the optoelectronic properties of quantum …
Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell
Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …