Stabilization of photoactive phases for perovskite photovoltaics
Interest in photovoltaics (PVs) based on Earth-abundant halide perovskites has increased
markedly in recent years owing to the remarkable properties of these materials and their …
markedly in recent years owing to the remarkable properties of these materials and their …
Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Q Cai, H You, H Guo, J Wang, B Liu, Z **e… - Light: Science & …, 2021 - nature.com
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …
environmental, industrial, military, and biological fields. As a representative III-nitride …
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
Nanoparticle assembly as a materials development tool
Nanoparticle assembly is a complex and versatile method of generating new materials,
capable of using thousands of different combinations of particle size, shape, composition …
capable of using thousands of different combinations of particle size, shape, composition …
Photoluminescence of ZnO nanowires: a review
One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for
applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to …
applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to …
Wide band gap chalcogenide semiconductors
Wide band gap semiconductors are essential for today's electronic devices and energy
applications because of their high optical transparency, controllable carrier concentration …
applications because of their high optical transparency, controllable carrier concentration …
Ultrawide‐bandgap semiconductors: research opportunities and challenges
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
AlGaN photonics: recent advances in materials and ultraviolet devices
D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
Stable ferroelectricity with high transition temperature in nanostructures is needed for
miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane …
miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane …
Boosting triplet self-trapped exciton emission in Te(IV)-doped Cs2SnCl6 perovskite variants
Perovskite variants have attracted wide interest because of the lead-free nature and strong
self-trapped exciton (STE) emission. Divalent Sn (II) in CsSnX 3 perovskites is easily …
self-trapped exciton (STE) emission. Divalent Sn (II) in CsSnX 3 perovskites is easily …