Stabilization of photoactive phases for perovskite photovoltaics

X Liu, D Luo, ZH Lu, JS Yun, M Saliba, SI Seok… - Nature Reviews …, 2023 - nature.com
Interest in photovoltaics (PVs) based on Earth-abundant halide perovskites has increased
markedly in recent years owing to the remarkable properties of these materials and their …

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Q Cai, H You, H Guo, J Wang, B Liu, Z **e… - Light: Science & …, 2021 - nature.com
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

M Kneissl, TY Seong, J Han, H Amano - nature photonics, 2019 - nature.com
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …

Nanoparticle assembly as a materials development tool

MS Lee, DW Yee, M Ye… - Journal of the American …, 2022 - ACS Publications
Nanoparticle assembly is a complex and versatile method of generating new materials,
capable of using thousands of different combinations of particle size, shape, composition …

Photoluminescence of ZnO nanowires: a review

A Galdámez-Martinez, G Santana, F Güell… - Nanomaterials, 2020 - mdpi.com
One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for
applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to …

Wide band gap chalcogenide semiconductors

R Woods-Robinson, Y Han, H Zhang, T Ablekim… - Chemical …, 2020 - ACS Publications
Wide band gap semiconductors are essential for today's electronic devices and energy
applications because of their high optical transparency, controllable carrier concentration …

Ultrawide‐bandgap semiconductors: research opportunities and challenges

JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …

AlGaN photonics: recent advances in materials and ultraviolet devices

D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

K Chang, J Liu, H Lin, N Wang, K Zhao, A Zhang, F **… - Science, 2016 - science.org
Stable ferroelectricity with high transition temperature in nanostructures is needed for
miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane …

Boosting triplet self-trapped exciton emission in Te(IV)-doped Cs2SnCl6 perovskite variants

R Zeng, K Bai, Q Wei, T Chang, J Yan, B Ke, J Huang… - Nano Research, 2021 - Springer
Perovskite variants have attracted wide interest because of the lead-free nature and strong
self-trapped exciton (STE) emission. Divalent Sn (II) in CsSnX 3 perovskites is easily …