US PATENT DOCUMENTS 2004O160812 A1 8/2004 Rinerson et al. 2004/0160817 A1
8/2004 Rinerson et al. 4,204,028 A 5/1980 Donley 2004/0160818 A1 8/2004 Rinerson et al …

2,655,609 A 10/1953 Shockley 2.971, 140 A 12/1959 Chappey et al. 3,796,926 A 3, 1974
Cole et al. 4,204,028 A 5/1980 Donley 4499, 557 A 2/1985 Holmberg et al. 4,646,266 A …

(57) ABSTRACT A memory cell is described, the memory cell comprising a 2,655,609 A
10/1953 Shockley dielectric rupture antifuse and a layer of a resistivity-switch 2.971, 140 A …

2002fOO74584 A1 2006/0050598 A1 2006.005495. 0 A1 2006, OO73657 A1
2006/0076549 A1 2006/0097.288 A1 2006/0098472 A1 2006.0109704 A1 2006.0113614 …

In some aspects, a method of forming a memory cell is pro vided that includes (1) forming a
first conductor above a Substrate;(2) forming a reversible resistance-switching ele ment …

Nonvolatile memory elements that are based on resistive Switching memory element layers
are provided. A nonvolatile memory element may have a resistive Switching metal oxide …

US8233308B2 - Memory cell that employs a selectively deposited reversible resistance-switching
element and methods of forming the same - Google Patents US8233308B2 - Memory cell that …

(54) HETEROJUNCTION DEVICE COMPRISING 3,796,926 A 3, 1974 Cole et al. A
SEMCONDUCTOR ANDA 4,203,123 A 5/1980 Shanks RESISTIVITY-SWITCHING OXDE …

US7629198B2 - Methods for forming nonvolatile memory elements with resistive-switching
metal oxides - Google Patents US7629198B2 - Methods for forming nonvolatile memory …

(57) ABSTRACT A resistance change memory device including: a semicon ductor substrate;
cell arrays stacked above the substrate, bit lines word lines; a read/write circuit formed on …