Unveiled Influence of Sub‐gap Density of States on Low‐Frequency Noise in Si‐Doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?
The presence of low‐frequency noise (LFN) in amorphous oxide semiconductor (AOS) thin‐
film transistors (TFTs) is of utmost concern, prompting extensive investigations into the …
film transistors (TFTs) is of utmost concern, prompting extensive investigations into the …
J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications
High-performance and low operating voltage are becoming increasingly significant device
parameters to meet the needs of future integrated circuit (IC) processors and ensure their …
parameters to meet the needs of future integrated circuit (IC) processors and ensure their …
Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors
Various plasma treatment effects such as oxygen (O 2), nitrogen (N 2), and argon (Ar) on
amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To …
amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To …
Improvement in short-channel effects of the thin-film transistors using atomic-layer deposited In–Ga–Sn–O channels with various channel compositions
SH Noh, HE Kim, JH Yang, YH Kim… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In–Ga–Sn–O (IGTO) thin-film transistors (TFTs) were fabricated with channel lengths from to
500 nm to investigate the short-channel effects (SCEs), in which IGTO channel compositions …
500 nm to investigate the short-channel effects (SCEs), in which IGTO channel compositions …
Analysis of low-frequency noise in quantum dot/metal-oxide phototransistors with metal chalcogenide interfaces
Low-frequency noise measurements are carried out to investigate optoelectronic
characteristics of CdSe quantum dot (QD)/indium-gallium-zinc-oxide (IGZO) heterostructured …
characteristics of CdSe quantum dot (QD)/indium-gallium-zinc-oxide (IGZO) heterostructured …
Low-frequency noise modeling of amorphous indium–zinc-oxide thin-film transistors
W Ye, Y Liu, B Wang, J Huang… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
An improved model for the low-frequency noise (LFN) of amorphous indium–zinc-oxide thin-
film transistors (a-IZO TFTs) is developed in this article. For a-IZO TFTs, the LFN is not only …
film transistors (a-IZO TFTs) is developed in this article. For a-IZO TFTs, the LFN is not only …
Impact of annealing on contact formation and stability of IGZO TFTs
Annealing processes were investigated on Indium-Gallium-Zinc-Oxide (IGZO) thin-film
transistors (TFTs). Molybdenum and aluminum were used as contact metals which defined …
transistors (TFTs). Molybdenum and aluminum were used as contact metals which defined …
Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors
We discuss the environmental instability of amorphous indium oxide (InO x)-based thin-film
transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison …
transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison …
Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor
J Park, H Woo, S Jeon - Journal of Vacuum Science & Technology B, 2017 - pubs.aip.org
The authors present the impact of fast charging and the ambient on the intrinsic mobility of a
WS 2 field-effect transistor (FET) by fast pulsed current–voltage (I–V) measurement …
WS 2 field-effect transistor (FET) by fast pulsed current–voltage (I–V) measurement …
Device characteristics of amorphous indium-gallium-zinc-oxide channel capped with silicon oxide passivation layers
It was investigated how the amorphous indium-gallium-zinc-oxide (a-IGZO) channel of a
back-gate of thin film transistor (TFT) is affected by the deposition of silicon oxide layers on …
back-gate of thin film transistor (TFT) is affected by the deposition of silicon oxide layers on …