This letter addresses mechanisms responsible for a high gate leakage current (Jg) and a
thick interfacial layer in the surface channel SiGe pFET enabling transistor fabrication with …

In this letter, we show an improvement not only in performance but also in reliability of a 30-
nm-thick biaxially strained SiGe (20% Ge) channel on Si p-type metal-oxide semiconductor …

We investigated the ferroelectric properties of self-induced HfGeO x in a HfO 2 film deposited
on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around …

Since the SiGe or Ge channel materials are desirable to enhance the carrier mobility
degraded by ultrathin high-k gate dielectric, the pMOSFET device with novel superlattice …

The impact of the Si cap/SiGe layer on the Hf-based high-k/metal gate SiGe channel
pMOSFET performance and reliability has been investigated. We proposed an optimized …

In this paper, we study the hole transport properties in strained-SiGe channel p-MOSFETs
(sSG pMOSFETs) with a Si-cap layer, which is introduced to avoid degradation of interface …

In this work, we for the first time study the fluctuation and interaction between interface traps
(ITs) and random dopants (RDs) of 16 nm MOSFETs. Totally random devices with 2D ITs at …

Silicon-Germanium (SiGe), used to boost pFET performance and enhance the properties of
high-metal gate devices, is grown by selective epitaxy on silicon. Since device parameters …

Kinetic Studies in GeO2/Ge System: A Retrospective from 2021 investigates reaction kinetics
in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and …

A small but persistent signal in wafer slot order was observed at functional test, affecting
logic yield. Through wafer slot Randomization at several operations in the route a process …