Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
This paper reviews the rapid advancements being made in the development of high electron
mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) …
mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) …
High mobility CMOS technologies using III–V/Ge channels on Si platform
MOSFETs using channel materials with high mobility and low effective mass have been
regarded as strongly important for obtaining high current drive and low supply voltage …
regarded as strongly important for obtaining high current drive and low supply voltage …
An energy-efficient heterogeneous CMP based on hybrid TFET-CMOS cores
The steep sub-threshold characteristics of inter-band tunneling FETs (TFETs) make an
attractive choice for low voltage operations. In this work, we propose a hybrid TFET-CMOS …
attractive choice for low voltage operations. In this work, we propose a hybrid TFET-CMOS …
Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for …
This paper describes for the first time, the heterogeneous integration of In 0.7 Ga 0.3 As
quantum well device structure on Si substrate through a novel, thin composite metamorphic …
quantum well device structure on Si substrate through a novel, thin composite metamorphic …
III-V/Ge MOS device technologies for low power integrated systems
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …
promising devices for high performance and low power integrated systems in the future …
Gradient ternary or quaternary multiple-gate transistor
CH Ko, CH Wann - US Patent 9,768,305, 2017 - Google Patents
An integrated circuit structure includes a semiconductor substrate; insulation regions over
the semiconductor substrate; and an epitaxy region over the semiconductor substrate and …
the semiconductor substrate; and an epitaxy region over the semiconductor substrate and …
InGaAs nanomembrane/Si van der Waals heterojunction photodiodes with broadband and high photoresponsivity
Development of broadband photodetectors is of great importance for applications in high-
capacity optical communication, night vision, and biomedical imaging systems. While …
capacity optical communication, night vision, and biomedical imaging systems. While …