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Degradation of hexagonal silicon-carbide-based bipolar devices
Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …
was presented at the European Conference on Silicon Carbide and Related Compounds …
Stacking faults in 4H–SiC epilayers and IGBTs
P Wang, W Cheng, Y Li, L Xu, P Hou, L Yu, Y Li… - Materials Science in …, 2024 - Elsevier
Silicon carbide (SiC) power devices are heading towards high power and high voltage,
where 4H–SiC bipolar devices play a key role due to low on-resistance and ultra-high …
where 4H–SiC bipolar devices play a key role due to low on-resistance and ultra-high …
Modeling of stacking faults in 4h-sic n-type epilayer for tcad simulation
S Asada, K Murata, H Tsuchida - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
Current–voltage characteristics of an n-type 4H-silicon carbide (SiC) epilayer containing a
stacking fault (SF) were analyzed using a technology computer-aided design (TCAD) …
stacking fault (SF) were analyzed using a technology computer-aided design (TCAD) …
Modeling of bipolar degradations in 4H-SiC power MOSFET devices by a 3C-SiC inclusive layer consideration in the drift region
The reliability of 4H-SiC power devices accounts not only to power packages but as well to
SiC materials which contain defects that impact the performance of power converters. A …
SiC materials which contain defects that impact the performance of power converters. A …
Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition
The morphology of basal plane dislocations (BPDs) in 4 H-Si C homoepitaxial layers has
been investigated by plan-view transmission x-ray topography and molten KOH etching …
been investigated by plan-view transmission x-ray topography and molten KOH etching …
Limited current conduction due to various types of stacking faults in n-type 4H-SiC epilayers
S Asada, K Murata, H Tsuchida - Applied Physics Express, 2022 - iopscience.iop.org
Impacts of various types of stacking faults (SFs) on electron conduction in an n-type 4H-SiC
epilayer were experimentally investigated. N-type Schottky barrier diodes were fabricated …
epilayer were experimentally investigated. N-type Schottky barrier diodes were fabricated …
[HTML][HTML] Impacts of silicon carbide defects on electrical characteristics of SiC devices
With more than thirty years of research and development until commercialization,
performance, reliability, and robustness of silicon carbide (SiC) based devices have been …
performance, reliability, and robustness of silicon carbide (SiC) based devices have been …
[HTML][HTML] Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes
S Asada, K Murata, H Tsuchida - Journal of Applied Physics, 2024 - pubs.aip.org
The impacts of single Shockley-type stacking faults (1SSFs) on the electrical characteristics
of 4H-SiC PiN diodes were examined by fabricating the PiN diodes containing the 1SSF …
of 4H-SiC PiN diodes were examined by fabricating the PiN diodes containing the 1SSF …
Thermal annealing and propagation of shockley stacking faults in 4H-SiC PiN diodes
Stacking faults within 4H-SiC PiN diodes are known to be detrimental to device operation.
Here, we present electroluminescence (EL) images of 4H-SiC PiN diodes providing …
Here, we present electroluminescence (EL) images of 4H-SiC PiN diodes providing …
Electronic structure of 3C inclusions in 4H SiC
The band gap, the polarization, and the quantum well states for 3C inclusions in 4H SiC are
studied in a systematic way with inclusions of 2–10 cubic layers in a supercell of 12 layers of …
studied in a systematic way with inclusions of 2–10 cubic layers in a supercell of 12 layers of …