Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

In this review paper, recent progress in the fabrication, transfer, and fundamental physical
properties of freestanding oxide perovskite thin films is discussed. First, the main strategies …

The integration of dissimilar materials in heterostructures has long been a cornerstone of
modern materials science—seminal examples are 2D materials and van der Waals …

Spherical ferroelectric domains, such as electrical bubbles, polar skyrmion bubbles and
hopfions, share a single and unique feature—their homogeneously polarized cores are …

Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

Strain engineering in perovskite oxides provides for dramatic control over material structure,
phase, and properties, but is restricted by the discrete strain states produced by available …

We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a
thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate …

Reducing the switching energy of ferroelectric thin films remains an important goal in the
pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the …

Suspended piezoelectric thin films are key elements enabling high‐frequency filtering in
telecommunication devices. To meet the requirements of next‐generation electronics, it is …

Complex oxides show a vast range of functional responses, unparalleled within the
inorganic solids realm, making them promising materials for applications as varied as next …