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A comprehensive review of ZnO materials and devices
The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …
because of its large exciton binding energy (60 meV) which could lead to lasing action …
[SÁCH][B] Zinc oxide: fundamentals, materials and device technology
This first systematic, authoritative and thorough treatment in one comprehensive volume
presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO …
presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO …
Plasmonically-boosted high-performance UV self-biased photodetector based on SiC-based low-dimensional heterojunction via Pt nanostructures deposition
M Yu, P Wan, K Tang, S He, Q Zhao, Y Zhai, D Shi… - Surfaces and …, 2024 - Elsevier
While possessing fully superior electrical, optical and mechanical capabilities, the third-
generation semiconductor SiC is extensively recognized as one of the most important …
generation semiconductor SiC is extensively recognized as one of the most important …
A self-powered UV photodetector based on TiO2 nanorod arrays
Y **e, L Wei, G Wei, Q Li, D Wang, Y Chen… - Nanoscale research …, 2013 - Springer
Large-area vertical rutile TiO 2 nanorod arrays (TNAs) were grown on F/SnO 2 conductive
glass using a hydrothermal method at low temperature. A self-powered ultraviolet (UV) …
glass using a hydrothermal method at low temperature. A self-powered ultraviolet (UV) …
Improved UV photoresponse of ZnO nanorod arrays by resonant coupling with surface plasmons of Al nanoparticles
In this study, localized surface plasmon resonance mediated by aluminium nanoparticles (Al
NPs) was employed to enhance the ultraviolet (UV) response of ZnO nanorod array (NRA) …
NPs) was employed to enhance the ultraviolet (UV) response of ZnO nanorod array (NRA) …
Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 109
CuI is a p-type transparent conductive semiconductor with unique optoelectronic properties,
including wide band gap (3.1 eV), high hole mobility (> 40 cm2 V− 1 s− 1 in bulk) and large …
including wide band gap (3.1 eV), high hole mobility (> 40 cm2 V− 1 s− 1 in bulk) and large …
Transparent p-CuI/n-ZnO heterojunction diodes
FL Schein, H von Wenckstern, M Grundmann - Applied Physics Letters, 2013 - pubs.aip.org
Transparent and electrically conducting p-type copper (I)-iodide thin-films form highly
rectifying p-CuI/n-ZnO diodes. Sputtered copper thin films on glass were transformed into …
rectifying p-CuI/n-ZnO diodes. Sputtered copper thin films on glass were transformed into …
Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
Layered materials separated from each bulk crystal can be assembled to form a strain-free
heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n …
heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n …