An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …

An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …

It is an object to provide a semiconductor device including a thin film transistor with favorable
electric properties and high reliability, and a method for manufacturing the semiconduc tor …

US PATENT DOCUMENTS 2006/01701 11 A1 8, 2006 Isa et al. 2006, O197092 A1 9, 2006
Hoffman et al. 7,067,843 B2 6/2006 Carcia et al. 2006/0208977 A1 9, 2006 Kimura …

US8647031B2 - Method of making a semiconductor device having a multicomponent oxide
- Google Patents US8647031B2 - Method of making a semiconductor device having a …

As a display device has a higher definition, the number of pixels, gate lines, and signal lines
are increased. When the number of the gate lines and the signal lines are increased, a …

An object of an embodiment of the present invention is to manufacture a semiconductor
device with high display qual ity and high reliability, which includes a pixel portion and a …

An oxide semiconductor layer which is intrinsic or Substan tially intrinsic and includes a
crystalline region in a surface portion of the oxide semiconductor layer is used for the tran …

The threshold voltage is shifted in a negative or positive direction in Some cases by an
unspecified factor in a manu facturing process of the thin film transistor. If the amount of shift …

US9213206B2 - Liquid crystal display device, semiconductor device, and electronic appliance
- Google Patents US9213206B2 - Liquid crystal display device, semiconductor device, and …