The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …

The electrical and optical properties of dislocations in Si are reviewed, namely dislocation‐
related recombination and luminescence, transport of minority and majority carriers along …

There is a growing demand for a silicon-based light emitters generating a light with a
wavelength in of 1.3-1.6 μm range, which can be integrated into silicon chips and used for in …

In this paper, we have investigated the room temperature dislocation-related
photoluminescence of electron irradiated silicon. It is found that high temperature annealing …

Spectral positions of dislocation-related luminescence (DRL) peaks from dislocation loops
located close to a pn junction in silicon were shifted by carrier injection level. We suppose …

Regular dislocation networks (DN) formed by direct bonding of Si wafers actively participate
in recombination of minority carriers. Besides nonradiative recombination (NRR), dislocation …

A new concept for Si‐based light emitting diodes (LED) capable of emitting at 1.5 μm is
proposed. It utilizes D‐band radiation from dislocations in Si. Whether a dislocation network …

This letter describes a novel method of introducing controllable dislocations in silicon by
electron irradiation. A corresponding dislocation-related light emitting diode with∼ 1.6 μm …

Electroluminescence from pin structure fabricated using crystalline silicon on glass technology
| Journal of Applied Physics | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella …

The present invention relates to production method and device applications of a new silicon
(Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width …