[HTML][HTML] Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines
Advancements in the semiconductor industry introduce novel channel materials, device
structures, and integration methods, leading to intricate physics challenges when …
structures, and integration methods, leading to intricate physics challenges when …
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures
This paper presents an extensive characterization and modeling of a commercial 28-nm
FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic …
FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic …
Neural network-based and modeling with high accuracy and potential model speed
In this brief, we demonstrate a neural network (NN)-based device modeling framework. This
NN model is built to model advanced field-effect transistors (FETs). Specific transfer …
NN model is built to model advanced field-effect transistors (FETs). Specific transfer …
BSIM—SPICE models enable FinFET and UTB IC designs
Two turn-key surface potential-based compact models are developed to simulate multigate
transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is …
transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is …
Neural network-based BSIM transistor model framework: Currents, charges, variability, and circuit simulation
We present a neural network (NN)-based transistor modeling framework, which includes
drain, source, and gate currents and charges and their variabilities. The training data are …
drain, source, and gate currents and charges and their variabilities. The training data are …
[KİTAP][B] Advanced SPICE Model for GaN HEMTs (ASM-HEMT): A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design
S Khandelwal - 2022 - books.google.com
This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a
new industry standard model for GaN-based power and RF circuit design. The author …
new industry standard model for GaN-based power and RF circuit design. The author …
[KİTAP][B] Compact models for integrated circuit design: conventional transistors and beyond
SK Saha - 2015 - library.oapen.org
This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing
In this paper a commercial 28 nm FDSOI CMOS technology is characterized and modeled
from room temperature down to 4.2 K. Here we explain the influence of incomplete …
from room temperature down to 4.2 K. Here we explain the influence of incomplete …
Leti-UTSOI2. 1: A compact model for UTBB-FDSOI technologies—Part II: DC and AC model description
T Poiroux, O Rozeau, P Scheer… - … on Electron Devices, 2015 - ieeexplore.ieee.org
A detailed presentation of the latest version of Leti-UTSOI compact model is provided. Leti-
UTSOI2 is the first available model able to describe the behavior of ultrathin body and BOX …
UTSOI2 is the first available model able to describe the behavior of ultrathin body and BOX …
Leti-UTSOI2. 1: A compact model for UTBB-FDSOI technologies—Part I: Interface potentials analytical model
T Poiroux, O Rozeau, P Scheer… - … on Electron Devices, 2015 - ieeexplore.ieee.org
A detailed presentation of the latest version of the Leti-UTSOI compact model is provided.
Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin …
Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin …