Combinatorial insights into do** control and transport properties of zinc tin nitride
ZnSnN2 is an Earth-abundant semiconductor analogous to the III–nitrides with potential as a
solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven …
solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven …
Review of ZnSnN2 semiconductor material
Zinc tin nitride (ZnSnN 2) is one of the emerging ternary nitride semiconductors considered
for photovoltaic device applications due to its attractive and tunable material properties and …
for photovoltaic device applications due to its attractive and tunable material properties and …
Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study
The earth-abundant semiconductor zinc tin nitride (ZnSnN 2) has garnered significant
attention as a prospective material in photovoltaic and lighting applications, primarily due to …
attention as a prospective material in photovoltaic and lighting applications, primarily due to …
Point Defects in a Two-Dimensional ZnSnN2 Nanosheet: A First-Principles Study on the Electronic and Magnetic Properties
The reduction of dimensionality is a very effective way to achieve appealing properties in
two-dimensional materials (2DMs). First-principles calculations can greatly facilitate the …
two-dimensional materials (2DMs). First-principles calculations can greatly facilitate the …
[PDF][PDF] Phase Stability and Defect Physics of a Ternary ZnSnN2 Semiconductor: First Principles Insights
Direct bandgap, earth abundant semiconductors with E g around 1.5 eV are essential for
both photovoltaic and solar to fuel (photocatalytic) energy conversion.[1, 2] Among the …
both photovoltaic and solar to fuel (photocatalytic) energy conversion.[1, 2] Among the …
Synthesis of a Novel Rocksalt‐Type Ternary Nitride Semiconductor MgSnN2 Using the Metathesis Reaction under High Pressure
F Kawamura, M Imura, H Murata… - European Journal of …, 2020 - Wiley Online Library
Novel ternary nitride semiconductor MgSnN2 was synthesized using the metathesis reaction
under high pressure (P= 5.5 GPa/T= 850° C/1 h). MgSnN2 obtained in this study showed a …
under high pressure (P= 5.5 GPa/T= 850° C/1 h). MgSnN2 obtained in this study showed a …
ZnSnN2 Schottky barrier solar cells
F Ye, RT Hong, CS He, ZC Zhao, YZ ** behavior and cation disorder in
Investigations on II-Sn-N 2 (II= Mg, Ca) have been started very recently compared to the
intense research of Zn-IV-N 2 (IV= Si, Ge, Sn). In this work, we study the phase stability of …
intense research of Zn-IV-N 2 (IV= Si, Ge, Sn). In this work, we study the phase stability of …