Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …

Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …

High-power device technology is a key technological factor for wireless communication,
which is one of the information network infrastructures in the 21st century, as well as power …

Today, the silicon carbide (SiC) semiconductor is becoming the front runner in advanced
power electronic devices. This material has been considered to be useful for abrasive …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

Abstract 4H-SiC (0001),(0001), and (1120) have been directly oxidized by N 2 O at 1300 C,
and metal–oxide–semiconductor (MOS) interfaces have been characterized. The interface …

Technological breakthroughs in growth control of SiC are reviewed. Step-controlled epitaxy
by using off-axis SiC {0001} substrates to grow high-quality epitaxial layer is explained in …