Recent breakthroughs in brain-inspired computing promise to address a wide range of
problems from security to healthcare. However, the current strategy of implementing artificial …

In the last 15 years memristors have been investigated as devices for high‐density, low‐
power, non‐volatile, resistive random access memory (ReRAM) beyond Moore's law. They …

Abstract Two‐dimensional (2D) materials are promising for resistive switching in
neuromorphic and in‐memory computing, as their atomic thickness substantially improve the …

The switching dynamics of a Au∥ VS2@ MoS2 atomristor is explored by first-principles
computations of the atomic-configuration energy and electron transport. It is found that …

Artificial synaptic devices utilizing nonvolatile memristors with 2D materials show potential
for neuromorphic computing systems due to their intriguing electrical properties, simple …

Graphite-phase carbon nitride quantum dots (gC 3 N 4 QDs) have garnered widespread
attention and considerable research interest as active media for resistive random-access …

Abstract Metal/Nb: SrTiO 3 (NSTO) heterostructures exhibit strong resistive switching (RS)
effects. However, structural mismatches hinder the formation of a stable, low-defect interface …

Memristor devices for resistive-switching memory and artificial synapses have emerged as
promising solutions for overcoming the technological challenges associated with the von …