Silicon quantum electronics

FA Zwanenburg, AS Dzurak, A Morello… - Reviews of modern …, 2013 - APS
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

QuantumATK: an integrated platform of electronic and atomic-scale modelling tools

S Smidstrup, T Markussen… - Journal of Physics …, 2019 - iopscience.iop.org
QuantumATK is an integrated set of atomic-scale modelling tools developed since 2003 by
professional software engineers in collaboration with academic researchers. While different …

Electronic excitations in nanostructures: an empirical pseudopotential based approach

G Bester - Journal of Physics: Condensed Matter, 2008 - iopscience.iop.org
Physics at the nanoscale has emerged as a field where discoveries of fundamental physical
effects lead to a greater understanding of the solid state. Additionally, the field is believed to …

A single-atom transistor

M Fuechsle, JA Miwa, S Mahapatra, H Ryu… - Nature …, 2012 - nature.com
The ability to control matter at the atomic scale and build devices with atomic precision is
central to nanotechnology. The scanning tunnelling microscope can manipulate individual …

[KIRJA][B] Computational Electronics: semiclassical and quantum device modeling and simulation

D Vasileska, SM Goodnick, G Klimeck - 2017 - books.google.com
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

Atomistic simulation of nanowires in the tight-binding formalism: From boundary conditions to strain calculations

M Luisier, A Schenk, W Fichtner, G Klimeck - Physical Review B—Condensed …, 2006 - APS
As the active dimensions of metal-oxide field-effect transistors are approaching the atomic
scale, the electronic properties of these “nanowire” devices must be treated on a quantum …

Valence band effective-mass expressions in the empirical tight-binding model applied to a Si and Ge parametrization

TB Boykin, G Klimeck, F Oyafuso - Physical Review B, 2004 - APS
Exact, analytic expressions for the valence band effective masses in the spin-orbit, sp 3 d 5
s* empirical tight-binding model are derived. These expressions together with an automated …

Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

M Usman, CA Broderick, A Lindsay, EP O'Reilly - Physical Review B …, 2011 - APS
We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro… - Nature Physics, 2008 - nature.com
The ability to build structures with atomic precision is one of the defining features of
nanotechnology. Achieving true atomic-level functionality, however, requires the ability to …

Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures

S Lee, F Oyafuso, P Von Allmen, G Klimeck - Physical Review B, 2004 - APS
The modeling of finite-extent semiconductor nanostructures that are embedded in a host
material requires a proper boundary treatment for a finite simulation domain. For the study of …