Silicon quantum electronics
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
QuantumATK: an integrated platform of electronic and atomic-scale modelling tools
QuantumATK is an integrated set of atomic-scale modelling tools developed since 2003 by
professional software engineers in collaboration with academic researchers. While different …
professional software engineers in collaboration with academic researchers. While different …
Electronic excitations in nanostructures: an empirical pseudopotential based approach
G Bester - Journal of Physics: Condensed Matter, 2008 - iopscience.iop.org
Physics at the nanoscale has emerged as a field where discoveries of fundamental physical
effects lead to a greater understanding of the solid state. Additionally, the field is believed to …
effects lead to a greater understanding of the solid state. Additionally, the field is believed to …
A single-atom transistor
The ability to control matter at the atomic scale and build devices with atomic precision is
central to nanotechnology. The scanning tunnelling microscope can manipulate individual …
central to nanotechnology. The scanning tunnelling microscope can manipulate individual …
[KIRJA][B] Computational Electronics: semiclassical and quantum device modeling and simulation
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
Atomistic simulation of nanowires in the tight-binding formalism: From boundary conditions to strain calculations
As the active dimensions of metal-oxide field-effect transistors are approaching the atomic
scale, the electronic properties of these “nanowire” devices must be treated on a quantum …
scale, the electronic properties of these “nanowire” devices must be treated on a quantum …
Valence band effective-mass expressions in the empirical tight-binding model applied to a Si and Ge parametrization
Exact, analytic expressions for the valence band effective masses in the spin-orbit, sp 3 d 5
s* empirical tight-binding model are derived. These expressions together with an automated …
s* empirical tight-binding model are derived. These expressions together with an automated …
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
The ability to build structures with atomic precision is one of the defining features of
nanotechnology. Achieving true atomic-level functionality, however, requires the ability to …
nanotechnology. Achieving true atomic-level functionality, however, requires the ability to …
Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures
The modeling of finite-extent semiconductor nanostructures that are embedded in a host
material requires a proper boundary treatment for a finite simulation domain. For the study of …
material requires a proper boundary treatment for a finite simulation domain. For the study of …