For reliable operation, individual cells of an STT-MRAM memory array must meet specific
requirements on their performance. In this work we review some of these requirements and …

We systematically developed a perpendicularly magnetized synthetic antiferromagnetically
(p-SAF) coupled reference structure with strong interlayer exchange coupling (IEC) at the" …

An abrupt transition of the interfacial exchange coupling from ferromagnetic to
antiferromagnetic was observed in the interface of perpendicularly magnetized L 1 0 …

(57) ABSTRACT A magnetoresistive element (and method of fabricating the
magnetoresistive element) that includes a free ferromagnetic layer comprising a first …

Aftereffect measurements have been performed on synthetic ferrimagnets showing strong
perpendicular magnetic anisotropy, namely (Co/Pt)/Ir/(Co/Pt), by measuring the …

Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic
antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the …

We report a perpendicular magnetic tunnel junction (pMTJ) cell with a tunnel
magnetoresistance (TMR) ratio of nearly 200% at room temperature based on …

Mn 3 Ga-based ferrimagnets have emerged as a promising platform for energy-efficient
spintronics. However, the challenge of identifying an appropriate substrate with minimal …

The micromagnetic continuum theory has been applied to perfect soft/hard multilayers
characterized by antiferromagnetic interface coupling. The soft and hard phases have …

Interlayer exchange coupling between [Pd/Co] multilayers and CoFeB/MgO layers with
perpendicular magnetic anisotropy (PMA) is investigated as functions of the thicknesses of …