Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
[PDF][PDF] Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
Progress in metal-organic chemical vapor deposition of high quality () 0001 N-polar (Al, Ga,
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and of 370 GHz
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs)
with a record current gain cutoff frequency (f_T) of 370 GHz. The HEMT without back barrier …
with a record current gain cutoff frequency (f_T) of 370 GHz. The HEMT without back barrier …
Electronic metadevices for terahertz applications
The evolution of electronics has largely relied on downscaling to meet the continuous needs
for faster and highly integrated devices. As the channel length is reduced, however, classic …
for faster and highly integrated devices. As the channel length is reduced, however, classic …
N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05
Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on
InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method …
InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method …
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Recent observation of high density polarization-induced two-dimensional electron gases in
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
The evolution of manufacturing technology for GaN electronic devices
AC Liu, PT Tu, C Langpoklakpam, YW Huang… - Micromachines, 2021 - mdpi.com
GaN has been widely used to develop devices for high-power and high-frequency
applications owing to its higher breakdown voltage and high electron saturation velocity …
applications owing to its higher breakdown voltage and high electron saturation velocity …
Nanowire Channel InAlN/GaN HEMTs With High Linearity of and
This letter reports a high linearity InAlN/GaN high-electron-mobility transistor (HEMT) with a
nanowire channel structure. It is found that the increase of source access resistance with …
nanowire channel structure. It is found that the increase of source access resistance with …