We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
develo** Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …

In this work we study the nature of the band gap in GeSn alloys for use in silicon-based
lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from …

Group IV-based germanium–tin (Ge1− ySny) compositional materials have recently shown
great promise for infrared detection, light emission and ultra-low power transistors. High …

In this paper a simulation study of the effect of conduction and valence band offsets on the
subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate …

We design a GeSn/SiGeSn type-II staggered heterojunction n-channel tunneling FET
(hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by …

We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum
well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and …

TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …

We present and compare three distinct atomistic models—based on first principles and semi-
empirical approaches—of the structural and electronic properties of Ge _ 1-x Sn _ x Ge 1-x …

Germanium alloyed with α-tin (GeSn) transitions to a direct bandgap semiconductor of
significance for optoelectronics. It is essential to localize the carriers within the active region …