Theory, technology and applications of piezoresistive sensors: A review

AS Fiorillo, CD Critello, SA Pullano - Sensors and Actuators A: Physical, 2018 - Elsevier
Sensors based on the detection of small resistance variations are universally recognized as
piezoresistive. Being one of the simplest, most common and most investigated classes of …

Vapor phase growth of semiconductor nanowires: key developments and open questions

L Güniat, P Caroff, A Fontcuberta i Morral - Chemical reviews, 2019 - ACS Publications
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Chemical–mechanical polishing of 4H silicon carbide wafers

W Wang, X Lu, X Wu, Y Zhang, R Wang… - Advanced Materials …, 2023 - Wiley Online Library
Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …

Semiconductor piezoresistance for microsystems

AA Barlian, WT Park, JR Mallon… - Proceedings of the …, 2009 - ieeexplore.ieee.org
Piezoresistive sensors are among the earliest micromachined silicon devices. The need for
smaller, less expensive, higher performance sensors helped drive early micromachining …

[KNJIGA][B] Computational Electronics: semiclassical and quantum device modeling and simulation

D Vasileska, SM Goodnick, G Klimeck - 2017 - books.google.com
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

Beyond graphene: Clean, hydrogenated and halogenated silicene, germanene, stanene, and plumbene

F Bechstedt, P Gori, O Pulci - Progress in Surface Science, 2021 - Elsevier
The fascinating electronic and optoelectronic properties of freestanding graphene and the
possible inclusion of novel two-dimensional (2D) systems in silicon-based electronics have …

Degradation of hexagonal silicon-carbide-based bipolar devices

M Skowronski, S Ha - Journal of applied physics, 2006 - pubs.aip.org
Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …

Silica on silicon carbide

V Presser, KG Nickel - Critical reviews in solid state and materials …, 2008 - Taylor & Francis
Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

Structure, energetics, and electronic states of III–V compound polytypes

F Bechstedt, A Belabbes - Journal of Physics: Condensed Matter, 2013 - iopscience.iop.org
Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …

Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure

A Zywietz, J Furthmüller, F Bechstedt - Physical Review B, 1999 - APS
We present results of first-principles calculations for the neutral and charged Si and C
monovacancies in cubic (3C) and hexagonal (4H) SiC. The calculations are based on the …