Effect of working pressure on the properties of RF sputtered SnS thin films and photovoltaic performance of SnS-based solar cells

SI Son, D Shin, YG Son, CS Son, DR Kim… - Journal of Alloys and …, 2020 - Elsevier
Tin sulfide (SnS) thin films were deposited with a single SnS target by radio frequency
magnetron sputtering while varying the working pressure (0.6 Pa to 2.6 Pa), and the …

Low-temperature growth of boron carbide coatings by direct current magnetron sputtering and high-power impulse magnetron sputtering

S Schmidt, C Höglund, J Jensen, L Hultman… - Journal of Materials …, 2016 - Springer
Abstract B 4 C coatings for 10 B-based neutron detector applications were deposited using
high-power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering …

Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnects

O Golim, V Vuorinen, G Ross, S Suihkonen… - Materials …, 2024 - Elsevier
The trend for heterogeneous integration has driven the need for a low-temperature bonding
process. Cu-Sn-In based solid-liquid interdiffusion (SLID) bonding technology has been …

The Michelangelo step: Removing scallo** and tapering effects in high aspect ratio through silicon vias

S Frasca, RC Leghziel, IN Arabadzhiev, B Pasquier… - Scientific Reports, 2021 - nature.com
We present here, for the first time, a fabrication technique that allows manufacturing scallop
free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs …

A review of soft errors and the low α-solder bum** process in 3-D packaging technology

DH Jung, A Sharma, JP Jung - Journal of Materials Science, 2018 - Springer
This study reviews soft errors in modern electronic assemblies, through silicon via (TSV),
and low α-solder bum** techniques for 3-D microelectronic packaging. The TSV …

Demonstration of 28GHz band pass filter toward 5G using ultra low loss and high accuracy through quartz vias

Y Sato, N Kidera - 2018 IEEE 68th Electronic Components and …, 2018 - ieeexplore.ieee.org
Synthetic fused quartz is an ideal material for devices in millimeter wave (mm-wave) band,
particularly suited for devices and infrastructure in the 5G arena due to its excellent low loss …

Highly-conformal sputtered through-silicon vias with sharp superconducting transition

JA Alfaro-Barrantes, M Mastrangeli… - Journal of …, 2021 - ieeexplore.ieee.org
This paper describes the microfabrication and electrical characterization of aluminum-
coated superconducting through-silicon vias (TSVs) with sharp superconducting transition …

Electrical Characterization of Shielded TSVs With Airgap Isolation for RF/mmWave Applications

S Oh, T Zheng, MS Bakir - IEEE Transactions on Components …, 2024 - ieeexplore.ieee.org
In this article, shielded and airgap-isolated through-silicon vias (TSVs) are fabricated and
measured up to 50 GHz. The unique TSV configuration is low-loss and electrically shielded …

Development of through-substrate via process for silicon-based monolithic microwave integrated circuits SIS mixer

S Ezaki, W Shan - IEEE Transactions on Applied …, 2023 - ieeexplore.ieee.org
We designed and fabricated superconducting monolithic microwave integrated circuits
(MMICs) at 2 mm wavelengths. Balanced superconductor-insulator-superconductor (SIS) …

Photoresponsive wettability switching of TiO2‐coated micropillar arrays with different geometries of overhang roofs

T Kobayashi, H Maeda, S Konishi - Micro & Nano Letters, 2017 - Wiley Online Library
In this work, micropillar array structures with overhang roofs which increase the switching
range of the TiO2 photoresponsive wettability, have been fabricated. The liquid droplet …