Analysis of the steady-state photocarrier grating method for the determination of the density of states in semiconductors

JA Schmidt, C Longeaud - Physical Review B—Condensed Matter and …, 2005 - APS
In this paper we present a complete theoretical analysis of the steady-state photocarrier
grating (SSPG) method, starting from the generalized equations that describe charge …

Photocurrent decay from the steady-state in thin film hydrogenated amorphous silicon: Numerical simulation analysis of experimental results

JA Schmidt, DM Goldie - Thin Solid Films, 2020 - Elsevier
Starting from the multiple trap** rate equations that define the non-equilibrium
concentrations of electrons and holes in extended states, the experiment of photocurrent …

Microcrystalline silicon thin films: A review of physical properties

A Dussan, RH Buitrago, RR Koropecki - Microelectronics journal, 2008 - Elsevier
In this work we present a study of the optical, electrical, electronic and structural properties of
Boron doped hydrogenated microcrystalline silicon thin films (μc-Si: H). The films were …

Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films

M Meaudre, ME Gueunier-Farret, R Meaudre… - Journal of applied …, 2005 - pubs.aip.org
Hydrogenated silicon-germanium alloys (SiGe: H) are deposited by plasma-enhanced
chemical vapor deposition in a plasma regime close to that of the formation of powder. It is …

Density-of-states in microcrystalline silicon from thermally-stimulated conductivity

N Souffi, GH Bauer, R Brüggemann - Journal of non-crystalline solids, 2006 - Elsevier
The technique of thermally-stimulated currents has been applied to extract the density-of-
states profile in microcrystalline silicon. Exploiting the experimental parameter space a …

Density of states in the gap of microcrystalline silicon determined from thermally-stimulated currents

N Souffi, GH Bauer, C Main, S Reynolds… - Thin solid films, 2008 - Elsevier
This paper presents the determination of the density of states (DOS) in the energy gap from
the Fermi level towards the conduction band edge in microcrystalline silicon (μc-Si: H) from …

Numerical modeling of thermally-stimulated currents for the density-of-states determination in thin-film semiconductors

C Main, N Souffi, S Reynolds, R Brüggemann - Journal of non-crystalline …, 2006 - Elsevier
The paper reports on thermally stimulated conductivity studies used for characterization of
the density of states profile in thin film semiconductors, by numerically solving the non-linear …

Modelling thermally‐stimulated currents in disordered semiconductors

C Main - physica status solidi (b), 2009 - Wiley Online Library
We report a computer modelling study of thermally stimulated currents in thin film
semiconductors. In a multi trap** context, we examine this method as a 'spectroscopy'of …

Thermally-Stimulated Currents in Thin-Film Semiconductors: Analysis and Modelling

C Main, N Souffi, S Reynolds, Z Aneva… - MRS Online …, 2006 - cambridge.org
This paper investigates the robustness of the thermally stimulated current technique as a
method to determine the density of states distribution in thin film semiconductors under a …

Thermally stimulated currents and photoconductivity in microcrystalline silicon

N Souffi - 2007 - oops.uni-oldenburg.de
This thesis focuses on the characterization of microcrystalline silicon (c-Si: H) samples by
numerically simulated and experimental thermally stimulated currents (TSC). TSC …