Resistive random access memory (RRAM), which is considered as one of the most
promising next-generation non-volatile memory (NVM) devices and a representative of …

The bipolar resistive switching (BRS) between a metallic low resistance state (LRS) and an
insulating high resistance state (HRS) is demonstrated for annealed graphene oxide (GO) …

The development of flexible memristor (MR) devices is a nascent research area with great
potential to revolutionize wearable electronics. A few flexible MR devices with proven …

In this work, we report for the first time the electrochemical oxidation as a technique to
improve the electrical performances of carbon-based resistive switching devices. The …

A rapid progress of the next-generation non-volatile memory device has been made in
recent years. Metal/insulator/Metal multi-layer structure resistive RAM (ReRAM) has …

Flexible transparent (FT) electronic devices have gained significant attention for applications
in flexible displays, sensors, and wearable devices recently. According to the report from the …

The increasing interest towards the synthesis and modification of different nanomaterials is
attributed to their outstanding mechanical, physical and electrical properties that allow their …

A rapid progress of the next-generation non-volatile memory device has been made in
recent years. Metal/insulator/Metal multi-layer structure resistive RAM (ReRAM) has …