Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing
S Zhou, K Potzger, J Von Borany, R Grötzschel… - Physical Review B …, 2008 - APS
In the last decade, transition-metal-doped ZnO has been intensively investigated as a route
to room-temperature diluted magnetic semiconductors (DMSs). However, the origin for the …
to room-temperature diluted magnetic semiconductors (DMSs). However, the origin for the …
X-ray diffraction of III-nitrides
MA Moram, ME Vickers - Reports on progress in physics, 2009 - iopscience.iop.org
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
Hexagonal boron nitride: Epitaxial growth and device applications
As a newest family member of the III-nitrides, BN is considered amongst the remaining
frontiers in wide energy bandgap semiconductors with potentials for technologically …
frontiers in wide energy bandgap semiconductors with potentials for technologically …
Piezoelectric sensors operating at very high temperatures and in extreme environments made of flexible ultrawide‐bandgap single‐crystalline AlN thin films
Extreme environments are often faced in energy, transportation, aerospace, and defense
applications and pose a technical challenge in sensing. Piezoelectric sensor based on …
applications and pose a technical challenge in sensing. Piezoelectric sensor based on …
[หนังสือ][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
Highly‐sensitive skin‐attachable eye‐movement sensor using flexible nonhazardous piezoelectric thin film
Accurate and continuous monitoring of eye movements using compact, low‐power‐
consuming, and easily‐wearable sensors is necessary in personal and public health and …
consuming, and easily‐wearable sensors is necessary in personal and public health and …
High-precision absolute lattice parameter determination of SrTiO3, DyScO3 and NdGaO3 single crystals
M Schmidbauer, A Kwasniewski… - Structural Science, 2012 - journals.iucr.org
The lattice parameters of three perovskite-related oxides have been measured with high
precision at room temperature. An accuracy of the order of 10− 5 has been achieved by …
precision at room temperature. An accuracy of the order of 10− 5 has been achieved by …
[HTML][HTML] Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy
S Raghuvansy, JP McCandless, M Schowalter, A Karg… - APL Materials, 2023 - pubs.aip.org
Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy | APL Materials |
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AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt Text Close Publishers AIP …
On the origin of dislocation generation and annihilation in α-Ga2O3 epilayers on sapphire
Epitaxial film quality is critical to the success of high-performance α-Ga 2 O 3 vertical power
devices. In this work, the origins of threading dislocation generation and annihilation in thick …
devices. In this work, the origins of threading dislocation generation and annihilation in thick …
Epitaxial titanium nitride microwave resonators: Structural, chemical, electrical, and microwave properties
Titanium nitride is an attractive material for a range of superconducting quantum-circuit
applications owing to its low microwave losses, high surface inductance, and chemical …
applications owing to its low microwave losses, high surface inductance, and chemical …