III-V semiconductor lasers are ubiquitous in modern optoelectronic devices, with
applications ranging from telecommunication to general lighting. Among the different kinds …

Wearable technology is becoming increasingly visible in the daily life for improving human
health and performance. Flexible photonics is rapidly emerging as a promising platform for …

We have fabricated a tubular whispering gallery mode laser based on InGaN/GaN quantum
wells and transferred it onto a flexible substrate. Compared with those without the …

Submicron-meter size GaAsBi disk resonators were fabricated with the GaAsBi/GaAs single-
quantum-well (QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW …

Bi incorporations can reduce the bandgap of GaAs 1-x Bi x. With a Bi content of 10.5%,
GaAsBi is predicted to emit light at 1.55 μm. However, high Bi incorporation is difficult for …

Abstract A GaSb/GaAsBi type-II quantum dot structure is proposed for fabricating middle-
wave infrared (MWIR) and long-wave infrared (LWIR) lasers. The finite element method is …

Cantilever-based freestanding microring lasers were demonstrated based on
InGaP/InGaAlP quantum wells emitting in the red region. The rotational symmetry of the …

Optical sensing has attracted more and more attention in recent years with the advance in
planar waveguide fabrication processes. The photon, as a carrier of information in sensing …

Предложена структура с квантовыми точками (КТ) II типа GaAsBi в GaSb для лазеров
среднего и дальнего ИК диапазонов. Для моделирования распределения деформаций …

A cantilever-based microring laser structure was proposed for easily integrating III-V active
layer into mechanically stretchable substrates. Local strain gauges were demonstrated by …