Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices.
In particular, topological phases of matter hosting non-Abelian quasiparticles (such as …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have
demonstrated enormous potential for advanced applications. However, the synthesis of …

Designing strategies to reach monodispersity in fabrication of semiconductor nanowire
ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire …

Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …

Antimonide-based ternary III–V nanowires (NWs) allow for a tunable bandgap over a wide
range, which is highly interesting for optoelectronics applications, and in particular for …