Growth and applications of GeSn-related group-IV semiconductor materials
S Zaima, O Nakatsuka, N Taoka… - … and technology of …, 2015 - iopscience.iop.org
We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
develo** Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
develo** Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
V Reboud, A Gassenq, N Pauc, J Aubin… - Applied Physics …, 2017 - pubs.aip.org
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …
SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
Recent studies of SiGeSn materials and optoelectronic devices hold great promise for
photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and …
photonics integrated circuits (PICs) on Si platform featuring scalable, cost-effective, and …
Direct bandgap group IV epitaxy on Si for laser applications
N Von Den Driesch, D Stange, S Wirths… - Chemistry of …, 2015 - ACS Publications
The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …
GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
A Gassenq, F Gencarelli, J Van Campenhout… - Optics express, 2012 - opg.optica.org
A surface-illuminated photoconductive detector based on Ge_0. 91Sn_0. 09 quantum wells
with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2 µm …
with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2 µm …
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …
Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells
D Stange, N Von den Driesch, D Rainko, S Roesgaard… - Optica, 2017 - opg.optica.org
Group IV photonics is on its way to be integrated with electronic circuits, making information
transfer and processing faster and more energy efficient. Light sources, a critical component …
transfer and processing faster and more energy efficient. Light sources, a critical component …
Dark Current Analysis on GeSn pin Photodetectors
Group IV alloys of GeSn have been extensively investigated as a competing material
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%
The recent demonstration of the GeSn laser opened a promising route towards the
monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn …
monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn …