High Amplitude Spike Generator in Au Nanodot-Incorporated NbOx Mott Memristor
NbO x-based Mott memristors exhibit fast threshold switching behaviors, making them
suitable for spike generators in neuromorphic computing and stochastic clock generators in …
suitable for spike generators in neuromorphic computing and stochastic clock generators in …
In-memory computing for machine learning and deep learning
In-memory computing (IMC) aims at executing numerical operations via physical processes,
such as current summation and charge collection, thus accelerating common computing …
such as current summation and charge collection, thus accelerating common computing …
Negative differential resistance in carbon-based nanostructures
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential
in numerous electrical circuits, including memristors. Several physical origins have been …
in numerous electrical circuits, including memristors. Several physical origins have been …
Water-soluble polyethylene-oxide polymer based memristive devices
In this research work, Conductive bridge Random Access memory devices (CBRAMs)
featuring a water-solution processed Polyethylene Oxide (PEO) layer used as solid polymer …
featuring a water-solution processed Polyethylene Oxide (PEO) layer used as solid polymer …
Modeling of 1S-1R crossbar array with Ti-doped VO2-based selector device
This article proposes a Ti-doped Vanadium dioxide (VO2) selector device for reducing the
leakage current. Here, TiO2 is formed by the Ti atoms in the VO2 film for acting like a good …
leakage current. Here, TiO2 is formed by the Ti atoms in the VO2 film for acting like a good …