Perovskite semiconductors for ionizing radiation detection
The detection of ionizing radiation such as X‐ray, γ‐ray, α‐particle, and neutrons has been
widely required in medical and industrial areas. Perovskite semiconductor detectors are …
widely required in medical and industrial areas. Perovskite semiconductor detectors are …
Self-biased Mo/n-4H-SiC Schottky barriers as high-performance ultraviolet photodetectors
We report a high photocurrent-to-dark current ratio (PDCR) of observed in Mo/4H-SiC
Schottky barrier diodes (SBDs) in self-biased mode when exposed to a 1.5 mW ultraviolet …
Schottky barrier diodes (SBDs) in self-biased mode when exposed to a 1.5 mW ultraviolet …
Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation
We report the effect of EH 6/7 electron trap centers alone on the performance of high-
resolution radiation detectors fabricated on n-type 4H–SiC epitaxial layers. A Schottky …
resolution radiation detectors fabricated on n-type 4H–SiC epitaxial layers. A Schottky …
Effect of temperature on growth of epitaxial layer on semi-insulating 4H-SiC substrate
S Zhao, J Chen, S Yang, G Yan, Z Shen, W Zhao… - Journal of Crystal …, 2023 - Elsevier
Abstract 4H-SiC has excellent physical and chemical properties such as wide band gap and
high electron mobility and can be used in microwave and radio frequency devices. Epitaxial …
high electron mobility and can be used in microwave and radio frequency devices. Epitaxial …
Coexistence of space charge limited and variable range hop** conduction mechanism in sputter-deposited Au/SiC metal–semiconductor–metal device
Despite being the cornerstone of high-temperature and high-power applications, the
fabrication of silicon carbide (SiC) thin films has been a major challenge among research …
fabrication of silicon carbide (SiC) thin films has been a major challenge among research …
Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection
We report the fabrication of novel self-biased high resolution radiation detectors achieved in
n-type 4H-SiC metal-oxide-semiconductor (MOS) devices. Vertical MOS structure has been …
n-type 4H-SiC metal-oxide-semiconductor (MOS) devices. Vertical MOS structure has been …
Investigation of internal electric fields in graphene/6H-SiC under illumination by the Pockels effect
V Dědič, J Sanitrák, T Fridrišek, M Rejhon… - Optics …, 2023 - opg.optica.org
In this paper, we introduce a method for map** profiles of internal electric fields in
birefringent crystals based on the electro-optic Pockels effect and measuring phase …
birefringent crystals based on the electro-optic Pockels effect and measuring phase …
Self-biased (p+)Diamond/(n)4H-SiC vertical Schottky diodes for UV detection
We present a groundbreaking advancement in ultraviolet (UV) radiation detection
technology through the fabrication of a novel (p+) BDD/(n) 4H-SiC heterojunction Schottky …
technology through the fabrication of a novel (p+) BDD/(n) 4H-SiC heterojunction Schottky …
Metal Halide Perovskite Solar Modules: The Challenge of Upscaling and Commercializing This Technology
Metal halide perovskite solar cells (PSCs) and modules offer promise as an ultralow-cost,
high-performing renewable energy source due to their high-power conversion efficiency …
high-performing renewable energy source due to their high-power conversion efficiency …
Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments
Reactor dosimetry environments require radiation detectors that are capable of operating at
high temperatures in extremely high neutron and gamma-ray dose rates. Silicon carbide …
high temperatures in extremely high neutron and gamma-ray dose rates. Silicon carbide …