In recent years, the research of bismuth chalcogenide (Bi 2 X 3, X= O, S, Se, and Te)
nanomaterials has expanded from the fields of optics, chemical, and electronic engineering …

Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-
level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) …

Photodetectors have been applied to pivotal optoelectronic components of modern optical
communication, sensing, and imaging systems. As a room-temperature ferroelectric van der …

Compared with three-dimensional semiconductors, low-dimensional (LD) semiconductors
have unique atomic arrangements and excellent optical and electrical characteristics, such …

Temperature variation‐induced thermoelectric catalytic efficiency of thermoelectric material
is simultaneously restricted by its electrical conductivity, Seebeck coefficient, and thermal …

Band alignment engineering is crucial for facilitating charge separation and transfer in
optoelectronic devices, which ultimately dictates the behavior of Van der Waals …

Self-powered broadband photodetectors (SPBDs) have received considerable attention
because of their significance in optoelectronic applications. However, limited by problems …

Broadband photodetectors with self-driven functions have attracted intensive scientific
interest due to their low energy consumption and high optical gain. However, high …

Fibrous conductive materials, typically, carbon fiber fabric (CFF), with warp and weft weaved
carbon-fiber (CF) structure, is one of the most desirable candidates for wearable electronics …

Infrared detection and imaging devices have great potential in the fields of defense and
security, medical monitoring, and food safety. As a novel method, photothermal assistants …