This review gives an overview of the recent progress in vacuum-based n-type transition
metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding …

The electronics industry has witnessed a surge in demand for semiconductor materials,
prompting researchers to explore active semiconductors that can effectively meet the …

Dynamic random-access memory (DRAM) devices are essential volatile memory
components in most digital devices. With the increasing demand for further low-power and …

P-type thin-film transistors (TFTs) using room temperature sputtered SnO x (x< 2) as a
transparent oxide semiconductor have been produced. The SnO x films show p-type …

Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication
of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) …

We report a model of the carrier transport and the subgap density of states in a
representative amorphous oxide semiconductor, amorphous InGaZnO4 (a‐IGZO), for device …

We report a model of the carrier transport and the subgap density of states in amorphous In
Ga Zn O 4 (⁠ a-IGZO) for device simulation of a-IGZO thin-film transistors (TFTs) operated in …

Sequential layers of the high-k dielectric ZrO 2 and the electron transporting semiconductors
ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using …

Films of the high-performance solution-processed amorphous oxide semiconductor a-
ZnIn4Sn4O15, grown from 2-methoxyethanol/ethanolamine solutions, were used to fabricate …

The properties of metal oxides with high dielectric constant (k) are being extensively studied
for use as gate dielectric alternatives to silicon dioxide (SiO2). Despite their attractive …