The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

The development of high-performance electronic devices based on two-dimensional (2D)
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …

In the field of semiconductors, three-dimensional (3D) integration not only enables
packaging of more devices per unit area, referred to as 'More Moore'but also introduces …

Two-dimensional transition metal dichalcogenides could potentially be used to create
transistors that are scaled beyond the capabilities of silicon devices. However, despite …

Strain engineering has been proposed as a promising method to boost the carrier mobility of
two-dimensional (2D) semiconductors. However, state-of-the-art straining approaches are …

Abstract Two-dimensional (2D) structures composed of atomically thin materials with high
carrier mobility have been studied as candidates for future transistors,,–. However, owing to …

Over the past decade, research on atomically thin two-dimensional (2D) transition metal
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …