Recent advances in emerging neuromorphic computing and perception devices
Y Zhu, Y Zhu, H Mao, Y He, S Jiang… - Journal of Physics D …, 2021 - iopscience.iop.org
Brain-inspired electronics represent a promising paradigm to resolve the energy and time
bottlenecks in conventional digital machines. Recent advances have spanned both …
bottlenecks in conventional digital machines. Recent advances have spanned both …
A journey towards reliability improvement of TiO2 based resistive random access memory: a review
Abstract A Resistive Random Access Memory (RRAM), where the memory performance
principally originated from 'resistive'change rather than 'capacitive'one (the case with …
principally originated from 'resistive'change rather than 'capacitive'one (the case with …
Interfacial oxygen vacancies as a potential cause of hysteresis in perovskite solar cells
Organometal halide perovskite solar cells (PSCs) have emerged as one of the most
promising photovoltaic technologies with efficiencies exceeding 20.3%. However, device …
promising photovoltaic technologies with efficiencies exceeding 20.3%. However, device …
Oxygen vacancy engineering in titanium dioxide for sodium storage
Q Wang, S Zhang, H He, C **e, Y Tang… - Chemistry–An Asian …, 2021 - Wiley Online Library
Titanium dioxide (TiO2) is a promising anode material for sodium‐ion batteries (SIBs) due to
its low cost, natural abundance, nontoxicity, and excellent electrochemical stability. Oxygen …
its low cost, natural abundance, nontoxicity, and excellent electrochemical stability. Oxygen …
Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device
Y Yu, F Yang, S Mao, S Zhu, Y Jia, L Yuan… - Chemical Physics …, 2018 - Elsevier
Resistance random access memory (RRAM) is a promising memory technology in the
applications of memory device. Herein, the amorphous TiO 2 thin film was grown onto …
applications of memory device. Herein, the amorphous TiO 2 thin film was grown onto …
A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3 …
C Funck, A Marchewka, C Bäumer… - Advanced electronic …, 2018 - Wiley Online Library
Metal–semiconductor Schottky interfaces are of high interest in many fields of semiconductor
physics. One type of electronic devices based on Schottky contacts are resistive switching …
physics. One type of electronic devices based on Schottky contacts are resistive switching …
Electronic Conduction in Ti/Poly-TiO2/Ti Structures
Recent intensive investigations on metal/metal oxide/metal structures have targeted
nanometric single grain oxides at high electric fields. Similar research on thicker …
nanometric single grain oxides at high electric fields. Similar research on thicker …
Emergent ferroelectricity in otherwise nonferroelectric oxides by oxygen vacancy design at heterointerfaces
Introducing point defects in complex metal oxides is a very effective route to engineer crystal
symmetry and therefore control physical properties. However, the inversion symmetry …
symmetry and therefore control physical properties. However, the inversion symmetry …
A compact modeling of TiO2-TiO2–x memristor
We developed a spice-compatible compact model of TiO 2-TiO 2–x memristors based on
classic ion transportation theory. Our model is shown to simulate important dynamic …
classic ion transportation theory. Our model is shown to simulate important dynamic …
Oxide nanomaterials and their applications as a memristor
Nowadays, oxide nanomaterials have received great attention due to their unique
semiconducting, optical and electrical properties. Oxide nanomaterials exhibit these …
semiconducting, optical and electrical properties. Oxide nanomaterials exhibit these …