Various challenges arise in a continuous scaling of MOSFET like Short Channel Effects, as
the channel length shrinks, current is produced in OFF-state, which also results in high …

Abstract The Short Channel Effects (SCE) are becoming more prominent in Complementary
Metal Oxide Semiconductor (CMOS) circuits with the introduction of nanoscale Metal Oxide …

Tunneling field-effect transistors (TFETs) are gaining attention because of their good
scalability and low leakage current. However, they suffer from low on-state current and …

With inherent structural simplicity due to the omission of ultrasteep pn junctions, the
conventional junctionless FET can be used as a barrier-controlled device with low OFF …

This paper proposes a p-type double gate junctionless field effect transistor having opposite
do** in the core with that of the silicon body referring to rectangular core–shell (RCS) …

A new state of the art double gate junctionless transistor (DGJLT) namely the rectangular
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …

This paper proposes an analytical threshold voltage model for the dielectric pocket double
gate (DP-DG) junctionless FETs (JLFETs). The channel potential function has been obtained …

In this paper, we propose an n-type double gate junctionless field-effect-transistor using
recessed silicon channel. The recessed silicon channel reduces the channel thickness …

A core–shell junctionless field-effect transistor (CS-JLFET) has been utilized for designing
ultra-low-power inverter and ring oscillator circuits. The core do** can be considered as …

The impression of gate dielectric and spacer dielectric on the performance of rectangular
core shell double gate junctionless transistor (RCS-DGJLT) using extensive simulations is …