THz emitters based on the photo-Dember effect
The photo-Dember effect is a source of pulsed THz emission following femtosecond pulsed
optical excitation. The emission results from the ultrafast spatial separation of electron–hole …
optical excitation. The emission results from the ultrafast spatial separation of electron–hole …
III-nitride photonics
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …
research is a very active field with many important applications in the areas of energy …
Extending group‐III nitrides to the infrared: Recent advances in InN
In this article, we provide an overview on the recent advances made in InN, including both
planar and nanowire structures. With the improved epitaxial growth process, the background …
planar and nanowire structures. With the improved epitaxial growth process, the background …
A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
CS Gallinat, G Koblmüller, JS Brown… - Journal of Applied …, 2007 - pubs.aip.org
We investigated the role of temperature and In∕ N flux ratios to determine suitable growth
windows for the plasma-assisted molecular beam epitaxy of In-face (0001) InN. Under …
windows for the plasma-assisted molecular beam epitaxy of In-face (0001) InN. Under …
Sources of unintentional conductivity in InN
Using first-principles methods, we investigate the effects of monatomic hydrogen in InN. We
find that hydrogen can occupy interstitial and substitutional sites. Interstitial hydrogen is …
find that hydrogen can occupy interstitial and substitutional sites. Interstitial hydrogen is …
Controlling the conductivity of InN
InN has emerged as a highly promising material for a number of technological applications,
but progress is still hampered by lack of control over its conductivity. The material exhibits a …
but progress is still hampered by lack of control over its conductivity. The material exhibits a …
Surface reconstructions on InN and GaN polar and nonpolar surfaces
We report a systematic and comprehensive computational study of surface reconstructions
on GaN and InN surfaces in various orientations, including the polar c plane as well as the …
on GaN and InN surfaces in various orientations, including the polar c plane as well as the …
THz excitation spectra of AIIIBV semiconductors
The dependence of terahertz (THz) radiation on the excitation wavelength of femtosecond
pulses (from 640 to 2600 nm) was investigated. Four different materials, InAs, InSb, InN and …
pulses (from 640 to 2600 nm) was investigated. Four different materials, InAs, InSb, InN and …
Terahertz emission from InAs induced by photo-Dember effect: Hydrodynamic analysis and Monte Carlo simulations
A Reklaitis - Journal of Applied Physics, 2010 - pubs.aip.org
Terahertz emission from InAs excited by the femtosecond optical pulse is investigated. The
hydrodynamic model is developed for the simplified analysis of the terahertz emission …
hydrodynamic model is developed for the simplified analysis of the terahertz emission …
Raman scattering study of anharmonic phonon decay in InN
We present Raman scattering measurements on wurtzite InN over a temperature range from
80 to 660 K. To investigate all phonon modes of the wurtzite structure, measurements were …
80 to 660 K. To investigate all phonon modes of the wurtzite structure, measurements were …